copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 1 /5 samwin features high ruggedness r ds( on ) (max 1.3 ? )@v gs =10v gate charge (typical 32 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics . this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply . n - channel mosfet absolute maximum ratings symbol parameter value unit to - 220 to - 220f v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 7.0 7.0 * a continuous drain current (@t c =100 o c) 5.1 4.1 * a i dm drain current pulsed (note 1) 28 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 230 mj e ar repetitive avalanche energy (note 1) 21 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation (@t c =25 o c) 147 68.5 w derating factor above 25 o c 1.18 0.55 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 220 to - 220f r thjc thermal resistance, junction to case 0.85 1.82 o c/w r thcs thermal resistance, case to sink 0.5 - o c/w r thja thermal resistance, junction to ambient 60 o c /w *. drain current is limited by junction temperature. bv dss : 600v i d : 7.0a r ds(on) : 1.3ohm 1 2 3 1. gate 2. drain 3. source to - 220f 1 2 3 to - 220 1 2 3 SW7N60 item sales type marking package packaging 1 sw p 7n60 SW7N60 to - 220 tube 2 sw f 7n60 SW7N60 to - 220f tube order codes
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 2 /5 samwin electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.57 - v/ o c i dss drain to source leakage current v ds =600v, v gs =0v - - 1 ua v ds =480v, t c =125 o c - - 20 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - - - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 3.5a - 1.0 1.3 ? g fs forward transconductance vds = 40 v, id = 3.5 a 5 - - s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz - 960 1260 pf c oss output capacitance - 110 135 c rss reverse transfer capacitance - 15 18 t d(on) turn on delay time v ds =300v, i d =7a, r g =25 ? (note 4 5) - 15 50 ns tr rising time - 30 80 t d(off) turn off delay time - 100 150 t f fall time - 38 100 q g total gate charge v ds =480v, v gs =10v, i d =7a (note 4 5) - 32 50 nc q gs gate - source charge - 5.7 - q gd gate - drain charge - 13 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 7 a i sm pulsed source current - - 28 a v sd diode forward voltage drop. i s =7a, v gs =0v - - 1.5 v t rr reverse recovery time i s =7a, v gs =0v, di f / dt =100a/us - 357 - ns q rr breakdown voltage charge - 3.67 - nc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 9.4mh, i as = 7a, v dd = 50v, r g =25 ?, starting t j = 25 o c 3. i sd 7a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW7N60
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 3 /5 samwin fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 10.0 20.0 30.0 40.0 vgs, gate source voltage(v) qg, total gate charge (nc) vds=480v notes: 1. 250s pulse test 2. t=25 3. vgs 2~10v step=1v vgs=20v vgs=10v SW7N60 fig. 6. on resistance variation vs. junction temperature fig 5. breakdown voltage variation vs. junction temperature fig. 4. on state current vs. diode forward voltage 150 25 0 0.5 1 1.5 2 2.5 3 - 70 - 45 - 20 5 30 55 80 105 130 155 180 rdson, (normalized drain - source on resistance tj junction temperture 0.8 0.9 1 1.1 1.2 - 70 - 45 - 20 5 30 55 80 105 130 155 180 bvdss, (normalized drain - source breakdown voltage tj junction temperture
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 4 /5 samwin fig. 8. transient thermal response curve SW7N60 fig. 7. maximum safe operating area v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9. gate charge test circuit & waveform fig. 10. switching time test circuit & waveform v ds same type as dut dut v gs 2ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 5 /5 samwin fig. 11. unclamped inductive switching test circuit & waveform SW7N60 fig.12 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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